2SD310 Todos los transistores

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2SD310 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD310

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD310

 

2SD310 Datasheet (PDF)

5.1. 2sd313.pdf Size:116K _utc

2SD310
2SD310

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD313L-x-TA3-T 2SD313G-x-TA3-T TO-220 B C E Tube 2SD313L-x-TF3-T 2SD313G-x-TF3

5.2. 2sd313.pdf Size:115K _mospec

2SD310
2SD310

A A A

5.3. 2sd313.pdf Size:90K _inchange_semiconductor

2SD310
2SD310

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25

5.4. 2sd315.pdf Size:156K _inchange_semiconductor

2SD310
2SD310

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD315 DESCRIPTION ·With TO-66 package ·Complement to type 2SB509 APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER COND

5.5. 2sd313.pdf Size:242K _lge

2SD310
2SD310

2SD313(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60

5.6. 2sd313.pdf Size:179K _wietron

2SD310
2SD310

2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 Features: 1 BASE 2 * DC Current Gain hFE = 40-320 @IC = 1.0A 3 1 * Low VCE(sat) ? 1.0V(MAX) @IC = 2.0A, IB = 0.2A 1. BASE 2. COLLECTOR * Complememtary to NPN 2SB507 3. EMITTER 3 TO-220 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Value Unit VCBO Collector to Base Voltage 60 V VCEO Col

5.7. 2sd313.pdf Size:519K _blue-rocket-elect

2SD310
2SD310

2SD313(BR3DD313R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 低电流低电压。 Low Current Low Voltage. 用途 / Applications 用于低频功率放大。 Low frequency power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列

Otros transistores... 2SD296 , 2SD297 , 2SD299 , 2SD30 , 2SD300 , 2SD301 , 2SD301F , 2SD31 , BC639 , 2SD311 , 2SD312 , 2SD313 , 2SD313C , 2SD313D , 2SD313E , 2SD313F , 2SD314 .

 


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