2SD313D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD313D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 130 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD313D
2SD313D Datasheet (PDF)
2sd313.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 3 2SD313L-x-TA3-T 2SD313G-x-TA3-T TO-220 B C E Tube2SD313L-x-TF3-T 2SD313G-x-
2sd313.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN)TO-220-3L 1. BASEFEATURES 2. COLLECTOR Low Collector-Emitter Saturation VoltageVce(sat)=1V(MAX)@IC=2A,IB=0.2A3. EMITTER DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 Equivalent Circuit 2SD313=Device code Solid dot=Green moldinn com
2sd313.pdf
2SD313(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21FeaturesLow Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltag
2sd313.pdf
2SD313NPN Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 Features:1BASE2* DC Current Gain hFE = 40-320 @IC = 1.0A31* Low VCE(sat) 1.0V(MAX) @IC = 2.0A, IB = 0.2A1. BASE2. COLLECTOR* Complememtary to NPN 2SB5073. EMITTER3TO-220EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector to Base Voltage60 VVCE
2sd313.pdf
2SD313(BR3DD313R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features Low Current Low Voltage. / Applications Low frequency power amplifier applications. / Equivalent Circuit
2sd313.pdf
isc Silicon NPN Power Transistor 2SD313DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB507Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplifier
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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