2SD32 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD32
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 25 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.125 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO1
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2SD32 Datasheet (PDF)
3da325 2sd325.pdf

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55~150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB
2sd320.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD320DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 2ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
2sd325.pdf

isc Silicon NPN Power Transistor 2SD325DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 1.5ACE(sat) CComplement to Type 2SB511Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.Rec
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC2567 | D38L6 | GES3250A | BC848CPDW1 | BSYP62 | DRA2115G | L2SA812SLT3G
History: 2SC2567 | D38L6 | GES3250A | BC848CPDW1 | BSYP62 | DRA2115G | L2SA812SLT3G



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