2SD32 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD32

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.125 W

Tensión colector-base (Vcb): 25 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.125 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.5 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO1

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2SD32 datasheet

 0.1. Size:46K  no
 2sd328.pdf pdf_icon

2SD32

 0.2. Size:146K  china
 3da325 2sd325.pdf pdf_icon

2SD32

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB

 0.3. Size:194K  inchange semiconductor
 2sd320.pdf pdf_icon

2SD32

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD320 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 2A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

 0.4. Size:213K  inchange semiconductor
 2sd325.pdf pdf_icon

2SD32

isc Silicon NPN Power Transistor 2SD325 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.5A CE(sat) C Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. Rec

MOSTRAR MÁS

Otros transistores... 2SD316-1, 2SD316-2, 2SD316A, 2SD317, 2SD317A, 2SD318, 2SD318A, 2SD319, BC556, 2SD320, 2SD321, 2SD322, 2SD323, 2SD324, 2SD325, 2SD325C, 2SD325D