2SD325C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD325C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 7 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 35 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 140 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220

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2SD325C datasheet

 8.1. Size:146K  china
 3da325 2sd325.pdf pdf_icon

2SD325C

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB

 8.2. Size:213K  inchange semiconductor
 2sd325.pdf pdf_icon

2SD325C

isc Silicon NPN Power Transistor 2SD325 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.5A CE(sat) C Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. Rec

 9.1. Size:46K  no
 2sd328.pdf pdf_icon

2SD325C

 9.2. Size:194K  inchange semiconductor
 2sd320.pdf pdf_icon

2SD325C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD320 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 2A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

MOSTRAR MÁS

Otros transistores... 2SD319, 2SD32, 2SD320, 2SD321, 2SD322, 2SD323, 2SD324, 2SD325, MPSA42, 2SD325D, 2SD325E, 2SD325F, 2SD326, 2SD327, 2SD328, 2SD329, 2SD33