2SD328 Todos los transistores

 

2SD328 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD328

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO5

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2SD328 datasheet

 ..1. Size:46K  no
2sd328.pdf pdf_icon

2SD328

 9.1. Size:146K  china
3da325 2sd325.pdf pdf_icon

2SD328

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB

 9.2. Size:194K  inchange semiconductor
2sd320.pdf pdf_icon

2SD328

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD320 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 2A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

 9.3. Size:213K  inchange semiconductor
2sd325.pdf pdf_icon

2SD328

isc Silicon NPN Power Transistor 2SD325 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.5A CE(sat) C Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. Rec

Otros transistores... 2SD324 , 2SD325 , 2SD325C , 2SD325D , 2SD325E , 2SD325F , 2SD326 , 2SD327 , D882P , 2SD329 , 2SD33 , 2SD330 , 2SD330C , 2SD330D , 2SD330E , 2SD330F , 2SD331 .

History: 2SD330C

 

 

 


 
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