2SD331C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD331C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 12 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SD331C

2SD331C Datasheet (PDF)

8.1. Size:189K inchange semiconductor
2sd331.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB515Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output sta

9.1. Size:33K sanyo
2sd330.pdf

Ordering number:397EPNP/NPN Triple Diffused Planar Silicon Transistors2SB514/2SD33050V/2A Low-Frequency Power AmplifierApplicationsFeatures Package Dimensions Especially suited for use in output stage of 10W AFunit:mmPower amplifier.2010C Complementary pair with the 2SB514 and 2SD313.[2SB514/2SD330]JEDEC : TO-220AB 1 : Base( ) : 2SB514EIAJ : SC-46 2 : Collector

9.2. Size:197K inchange semiconductor
2sd339.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 7.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpos

9.3. Size:196K inchange semiconductor
2sd338.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD338DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

9.4. Size:212K inchange semiconductor
2sd330.pdf

isc Silicon NPN Power Transistor 2SD330DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB514Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output stage of 10W AF powerampl

9.5. Size:206K inchange semiconductor
2sd334.pdf

isc Silicon NPN Power Transistor 2SD334DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 110

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050