2SD339-1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 7.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpos

Ordering number:397EPNP/NPN Triple Diffused Planar Silicon Transistors2SB514/2SD33050V/2A Low-Frequency Power AmplifierApplicationsFeatures Package Dimensions Especially suited for use in output stage of 10W AFunit:mmPower amplifier.2010C Complementary pair with the 2SB514 and 2SD313.[2SB514/2SD330]JEDEC : TO-220AB 1 : Base( ) : 2SB514EIAJ : SC-46 2 : Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB515Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output sta

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD338DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

isc Silicon NPN Power Transistor 2SD330DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB514Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output stage of 10W AF powerampl

isc Silicon NPN Power Transistor 2SD334DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 110