2SD345
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD345
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35
W
Tensión colector-base (Vcb): 70
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD345
2SD345
Datasheet (PDF)
..1. Size:188K inchange semiconductor
2sd345.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD345DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli
9.1. Size:188K inchange semiconductor
2sd343.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli
9.2. Size:180K inchange semiconductor
2sd348.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD348DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl
9.3. Size:199K inchange semiconductor
2sd347.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a
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