2SD36. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD36 datasheet

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2sd361.pdf pdf_icon

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2sd363.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD363 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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2sd365.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl

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2sd362.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Otros transistores... 2SD351 , 2SD352 , 2SD353 , 2SD355 , 2SD356 , 2SD357 , 2SD358 , 2SD359 , 2SC1815 , 2SD360 , 2SD361 , 2SD362 , 2SD362N , 2SD362O , 2SD362R , 2SD363 , 2SD363A .