2SD368 Todos los transistores

 

2SD368 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD368
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1300 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SD368

 

2SD368 Datasheet (PDF)

 9.1. Size:32K  no
2sd361.pdf

2SD368

 9.2. Size:212K  inchange semiconductor
2sd363.pdf

2SD368
2SD368

isc Silicon NPN Power Transistor 2SD363DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.3. Size:210K  inchange semiconductor
2sd365.pdf

2SD368
2SD368

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl

 9.4. Size:211K  inchange semiconductor
2sd362.pdf

2SD368
2SD368

isc Silicon NPN Power Transistor 2SD362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: HSD667A

 

 
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History: HSD667A

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Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
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