2SD402A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD402A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD402A
2SD402A Datasheet (PDF)
2sd402.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SB547Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical defl
2sd401a.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
2sd401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter
2sd400 to-92mod.pdf
2SD400 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Low-Frequency power Amp, Electronic Governor Applications 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 25 V 13.800VCEO Collector-Emitter Voltage 25 V 14.200VE
2sd400 to-92l.pdf
2SD400 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low-Frequency power Amp, Electronic Governor Applications 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 25 V 13.80014.200VCEO Collector-Emitter Voltage 25 V VEBO Emi
2sd400.pdf
2SD400(BR3DG400L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High Voltage ,low. Current. / Applications Low frequency power amplifier, electronic governor applications.
2sd401a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount
2sd401.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 30A02CH-TL-E
History: 30A02CH-TL-E
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050