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2SD407 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD407
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3000
   Paquete / Cubierta: TO8

 Búsqueda de reemplazo de transistor bipolar 2SD407

 

2SD407 Datasheet (PDF)

 ..1. Size:41K  no
2sd407.pdf

2SD407

 9.2. Size:113K  mospec
2sd401a.pdf

2SD407
2SD407

AAA

 9.3. Size:55K  jmnic
2sd401a.pdf

2SD407
2SD407

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

 9.4. Size:117K  jmnic
2sd401.pdf

2SD407
2SD407

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter

 9.5. Size:220K  lge
2sd400 to-92mod.pdf

2SD407
2SD407

2SD400 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Low-Frequency power Amp, Electronic Governor Applications 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 25 V 13.800VCEO Collector-Emitter Voltage 25 V 14.200VE

 9.6. Size:223K  lge
2sd400 to-92l.pdf

2SD407
2SD407

2SD400 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low-Frequency power Amp, Electronic Governor Applications 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 25 V 13.80014.200VCEO Collector-Emitter Voltage 25 V VEBO Emi

 9.7. Size:452K  blue-rocket-elect
2sd400.pdf

2SD407
2SD407

2SD400(BR3DG400L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High Voltage ,low. Current. / Applications Low frequency power amplifier, electronic governor applications.

 9.8. Size:187K  inchange semiconductor
2sd402.pdf

2SD407
2SD407

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SB547Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical defl

 9.9. Size:125K  inchange semiconductor
2sd401a.pdf

2SD407
2SD407

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount

 9.10. Size:149K  inchange semiconductor
2sd401.pdf

2SD407
2SD407

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

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History: DTC323 | 2N44

 

 
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History: DTC323 | 2N44

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