2SD420 Todos los transistores

 

2SD420 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD420
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 700
   Paquete / Cubierta: TO66
 

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2SD420 Datasheet (PDF)

 9.1. Size:204K  inchange semiconductor
 2sd427.pdf pdf_icon

2SD420

isc Silicon NPN Power Transistors 2SD427DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SB557Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 50W high-fidelity audio f

 9.2. Size:208K  inchange semiconductor
 2sd425.pdf pdf_icon

2SD420

isc Silicon NPN Power Transistors 2SD425DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

 9.3. Size:116K  inchange semiconductor
 2sd425 2sd426.pdf pdf_icon

2SD420

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

 9.4. Size:208K  inchange semiconductor
 2sd426.pdf pdf_icon

2SD420

isc Silicon NPN Power Transistors 2SD426DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

MOSTRAR MÁS

Otros transistores... 2SD412 , 2SD413 , 2SD414 , 2SD415 , 2SD416 , 2SD417 , 2SD418 , 2SD419 , BC548 , 2SD421 , 2SD422 , 2SD423 , 2SD424 , 2SD425 , 2SD426 , 2SD427 , 2SD427S .

History: 2N3917 | 13003F

 

 
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