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2SD427 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD427

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Capacitancia de salida (Cc): 400 pF

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO3

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2SD427 Datasheet (PDF)

1.1. 2sd427.pdf Size:238K _inchange_semiconductor

2SD427
2SD427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD427 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25? ·Complement to Type 2SB557 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 50W high-fidelity audio frequency amplifier output stage. AB

5.1. 2sd425 2sd426.pdf Size:116K _inchange_semiconductor

2SD427
2SD427

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SB555/556 Ў¤ High power dissipation APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute ma

5.2. 2sd428.pdf Size:238K _inchange_semiconductor

2SD427
2SD427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD428 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? ·Complement to Type 2SB558 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. AB

 5.3. 2sd424.pdf Size:120K _inchange_semiconductor

2SD427
2SD427

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD424 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SB554 Ў¤ High power dissipation Ў¤ High collector-emitter breakdown voltage : VCEO=180V(min) APPLICATIONS Ў¤ Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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