2SD427 Todos los transistores

 

2SD427 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD427
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO3
 

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2SD427 datasheet

 ..1. Size:204K  inchange semiconductor
2sd427.pdf pdf_icon

2SD427

isc Silicon NPN Power Transistors 2SD427 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SB557 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio f

 9.1. Size:208K  inchange semiconductor
2sd425.pdf pdf_icon

2SD427

isc Silicon NPN Power Transistors 2SD425 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

 9.2. Size:116K  inchange semiconductor
2sd425 2sd426.pdf pdf_icon

2SD427

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

 9.3. Size:208K  inchange semiconductor
2sd426.pdf pdf_icon

2SD427

isc Silicon NPN Power Transistors 2SD426 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

Otros transistores... 2SD419 , 2SD420 , 2SD421 , 2SD422 , 2SD423 , 2SD424 , 2SD425 , 2SD426 , 2SD1047 , 2SD427S , 2SD428 , 2SD429 , 2SD43 , 2SD430 , 2SD431 , 2SD432 , 2SD433 .

 

 

 


 
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