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2SD458 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD458
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 6.5
   Paquete / Cubierta: TO3
 

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2SD458 Datasheet (PDF)

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2SD458

isc Silicon NPN Power Transistors 2SD458DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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2SD458

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD45DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =

 9.2. Size:190K  inchange semiconductor
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2SD458

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching

Otros transistores... 2SD438 , 2SD438MP , 2SD439 , 2SD43A , 2SD44 , 2SD445 , 2SD45 , 2SD457 , 2SC2625 , 2SD459 , 2SD46 , 2SD460 , 2SD461 , 2SD463 , 2SD464 , 2SD465 , 2SD466 .

History: TFN2412 | DTS403 | 3DD6

 

 
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