2SD46 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES 1TO-92* Low frequency power amplifier * Complement to 2SB562 1TO-92NL*Pb-free plating product number: 2SD468L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SD468-x-T92-B 2SD468L-x-T92-B TO-92 E C B Tape Box2SD

2SD467Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB561OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD467Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollec

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO 92L 2SD468 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES Low Frequency Power Amplifier 3. BASE Complementary Pair with 2SB562 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 25 V VCEO Collector-Emitte

2SD467(BR3DG467K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features 2SB561(BR3CG561K) Complementary pair with 2SB561(BR3CG561K). / Applications Low frequency power amplifier. / Equivalent Circuit

2SD468(BR3DG468L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB562(BR3CG562L) Complementary pair with 2SB562(BR3CG562L). / Applications Low frequency power amplifier. / Equivalent Circuit

************************************************************************************ 2SD468 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS(Ta=25 )Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter -Base Voltage VEBO 5 V Collector Current (DC) Ic 1 A Collector Dissipation (Tc=25

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD460DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching

isc Silicon NPN Darlingtion Power Transistor 2SD469DESCRIPTION Low Collector-Emitter Breakdown VoltageV = 110V (Min)(BR)CEOCollector Power DissipationPc=100W@TC=25Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etc.ABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD463DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 3000(Min) @I = 5AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power