2SD474K Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD474K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO92
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2SD474K datasheet
9.2. Size:32K hitachi
2sd476.pdf 
2SD476(K), 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD476(K) 2SD476A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage
9.4. Size:208K inchange semiconductor
2sd476n.pdf
isc Silicon NPN Power Transistors 2SD476N DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I =2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
9.5. Size:150K inchange semiconductor
2sd476 2sd476a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMET
9.6. Size:184K inchange semiconductor
2sd473.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and
9.7. Size:212K inchange semiconductor
2sd478.pdf
isc Silicon NPN Power Transistor 2SD478 DESCRIPTION Collector Power Dissipation P = 30W C Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
9.8. Size:186K inchange semiconductor
2sd470.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD470 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM
Otros transistores... 2SD471AO, 2SD471AY, 2SD472, 2SD472H, 2SD473, 2SD473H, 2SD473K, 2SD474, BC639, 2SD475, 2SD475A, 2SD476, 2SD476A, 2SD476AK, 2SD476K, 2SD477, 2SD478
