2SD525R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD525R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 12 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO220

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2SD525R datasheet

 8.1. Size:69K  wingshing
 2sd525.pdf pdf_icon

2SD525R

2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 40 W Juncti

 8.2. Size:87K  jmnic
 2sd525.pdf pdf_icon

2SD525R

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage VCEO=100V Low collector saturation volage VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION

 8.3. Size:213K  inchange semiconductor
 2sd525.pdf pdf_icon

2SD525R

isc Silicon NPN Power Transistor 2SD525 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB595 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for

MOSTRAR MÁS

Otros transistores... 2SD52, 2SD520, 2SD521, 2SD522, 2SD523, 2SD524, 2SD525, 2SD525O, TIP127, 2SD525Y, 2SD526, 2SD526O, 2SD526R, 2SD526Y, 2SD528, 2SD528H, 2SD529