2SD539 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD539

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 13 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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2SD539 datasheet

 9.1. Size:199K  inchange semiconductor
2sd535.pdf pdf_icon

2SD539

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD535 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current, high power application

 9.2. Size:196K  inchange semiconductor
2sd534.pdf pdf_icon

2SD539

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD534 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters,converters,and other general high-cur

 9.3. Size:195K  inchange semiconductor
2sd536.pdf pdf_icon

2SD539

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD536 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters. General

 9.4. Size:201K  inchange semiconductor
2sd531.pdf pdf_icon

2SD539

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD531 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.) @ I = 4.0A CE(sat) C With TO-220C Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power ampli

Otros transistores... 2SD532, 2SD533, 2SD534, 2SD535, 2SD536, 2SD537, 2SD538, 2SD538A, 2SD669A, 2SD539A, 2SD53A, 2SD54, 2SD540, 2SD541, 2SD542, 2SD543, 2SD544