2SD553O Todos los transistores

 8.1. Size:229K  toshiba
 2sd553.pdf

 8.2. Size:213K  inchange semiconductor
 2sd553.pdf

isc Silicon NPN Power Transistor 2SD553 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 4A CE(sat) C Complement to Type 2SB553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applicati

 9.1. Size:202K  inchange semiconductor
 2sd557.pdf

isc Silicon NPN Power Transistor 2SD557 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.2. Size:208K  inchange semiconductor
 2sd552.pdf

isc Silicon NPN Power Transistor 2SD552 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V (Min) (BR)CEO High Power Dissipation Complement to Type 2SB552 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier, power switching applications. DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATING

 9.3. Size:207K  inchange semiconductor
 2sd551.pdf

isc Silicon NPN Power Transistor 2SD551 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Complement to Type 2SB681 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier applications. Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE

 9.4. Size:182K  inchange semiconductor
 2sd554.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD554 DESCRIPTION Contunuous Collector Current-I = 2A C Power Dissipation-P =30W @T = 25 D C Collector-Emitter Saturation Voltage- V )= 2.0 V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifi

 9.5. Size:207K  inchange semiconductor
 2sd555.pdf

isc Silicon NPN Power Transistor 2SD555 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO High Power Dissipation Complement to Type 2SB600 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.6. Size:180K  inchange semiconductor
 2sd556.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD556 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V (Min) (BR)CEO Wide Area of Safe Operation High Power High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(

 9.7. Size:202K  inchange semiconductor
 2sd550.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD550 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = 0.8V(Max)@I = 5A CE(sat) C With TO-66 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching ap