2SD554
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD554
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 250
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar 2SD554
2SD554
Datasheet (PDF)
..1. Size:182K inchange semiconductor
2sd554.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD554DESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =30W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.0 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifi
9.2. Size:202K inchange semiconductor
2sd557.pdf
isc Silicon NPN Power Transistor 2SD557DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
9.3. Size:213K inchange semiconductor
2sd553.pdf
isc Silicon NPN Power Transistor 2SD553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4ACE(sat) CComplement to Type 2SB553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applicati
9.4. Size:208K inchange semiconductor
2sd552.pdf
isc Silicon NPN Power Transistor 2SD552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATING
9.5. Size:207K inchange semiconductor
2sd551.pdf
isc Silicon NPN Power Transistor 2SD551DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier applications.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE
9.6. Size:207K inchange semiconductor
2sd555.pdf
isc Silicon NPN Power Transistor 2SD555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
9.7. Size:180K inchange semiconductor
2sd556.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOWide Area of Safe OperationHigh PowerHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(
9.8. Size:202K inchange semiconductor
2sd550.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.8V(Max)@I = 5ACE(sat) CWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching ap
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