2SD569 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD569DESCRIPTIONHigh Collector Current: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 5ACE(sat) CComplement to Type 2SB708Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMUM RA

DATA SHEETSILICON POWER TRANSISTOR2SD560NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD560 is a mold power transistor developed for low- ORDERING INFORMATIONfrequency power amplifiers and low-speed switching. This transistor isOrdering Name Packageideal for direct driving from the IC output of devices such

isc Silicon NPN Power Transistor 2SD568DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 5ACE(sat) CComplement to Type 2SB707Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMUM R

isc Silicon NPN Darlington Power Transistor 2SD560DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 2000(Min) @I = 3.0AFE CLow Saturation VoltageComplement to Type 2SB601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and l