2SD569 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD569

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220

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2SD569 datasheet

 ..1. Size:213K  inchange semiconductor
 2sd569.pdf pdf_icon

2SD569

isc Silicon NPN Power Transistor 2SD569 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB708 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RA

 9.1. Size:90K  nec
 2sd560.pdf pdf_icon

2SD569

DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such

 9.2. Size:209K  fuji
 2sd560.pdf pdf_icon

2SD569

 9.3. Size:213K  inchange semiconductor
 2sd568.pdf pdf_icon

2SD569

isc Silicon NPN Power Transistor 2SD568 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM R

MOSTRAR MÁS

Otros transistores... 2SD560O, 2SD560R, 2SD560Y, 2SD565, 2SD568, 2SD568O, 2SD568R, 2SD568Y, 2SA1943, 2SD569O, 2SD569R, 2SD569Y, 2SD57, 2SD570, 2SD571, 2SD572, 2SD573