2SD574A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD574A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 400 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar 2SD574A

2SD574A Datasheet (PDF)

9.1. Size:169K nec
2sd571.pdf

9.2. Size:20K no
2sd575.pdf

9.3. Size:217K inchange semiconductor
2sd570.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD570DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS

9.4. Size:181K inchange semiconductor
2sd577.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD577DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25

9.5. Size:189K inchange semiconductor
2sd5702.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5702DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT

9.6. Size:188K inchange semiconductor
2sd5703.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5703DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD598 | BLX75 | GES6218

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050