2SD575 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD575

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1400 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 2.5

Encapsulados: TO3

 Búsqueda de reemplazo de 2SD575

- Selecciónⓘ de transistores por parámetros

 

2SD575 datasheet

 ..1. Size:20K  no
 2sd575.pdf pdf_icon

2SD575

 9.1. Size:169K  nec
 2sd571.pdf pdf_icon

2SD575

 9.2. Size:217K  inchange semiconductor
 2sd570.pdf pdf_icon

2SD575

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD570 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS

 9.3. Size:181K  inchange semiconductor
 2sd577.pdf pdf_icon

2SD575

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD577 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... 2SD569Y, 2SD57, 2SD570, 2SD571, 2SD572, 2SD573, 2SD574, 2SD574A, A1941, 2SD575L, 2SD576, 2SD577, 2SD578, 2SD578A, 2SD579, 2SD579A, 2SD58