2SD59 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD59
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.5 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO3
Búsqueda de reemplazo de 2SD59
- Selecciónⓘ de transistores por parámetros
2SD59 datasheet
0.2. Size:50K panasonic
2sd592 e.pdf 
Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB621 and 2SB621A 5.0 0.2 4.0 0.2 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SD592 30 VCBO V +0.2 +0.2 base volta
0.3. Size:46K panasonic
2sd592.pdf
Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB621 and 2SB621A 5.0 0.2 4.0 0.2 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SD592 30 VCBO V +0.2 +0.2 base volta
0.4. Size:322K secos
2sd596.pdf
2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current gain A L Complementary to 2SB624 3 3 Top View C B 1 MARKING 1 2 2 K E DV4 D PACKAGE INFORMATION H J F G Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max
0.5. Size:1584K jiangsu
2sd596.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. 1.BASE Complimentary to 2SB624 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Ba
0.6. Size:1433K htsemi
2sd596.pdf
2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. SOT-23 Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units 2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200
0.7. Size:378K lge
2sd596 sot-23-3l.pdf
2SD596 SOT-23-3L Transistor(NPN) 1.BASE SOT-23-3L 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC Current gain.hFE 200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
0.8. Size:364K lge
2sd596 sot-23.pdf
2SD596 SOT-23 Transistor(NPN) 1.BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC Current gain.hFE 200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC C
0.10. Size:1278K kexin
2sd596.pdf
SMD Type Transistors NPN Transistors 2SD596 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High DC Current gain. Complimentary to 2SB624 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 2
0.11. Size:907K cn shikues
2sd596.pdf
2SD596 Silicon Epitaxial Planar Transistor FEATURES Micro package. Complementary to 2SB624 PNP Transistor. High DC current gain h FE 200TYP.(V CE=1.0V,I C =100mA) APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwi
0.12. Size:1599K cn yongyutai
2sd596.pdf
2SD596 TRANSI STOR (NPN) 2SD596 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to 2SB624 High DC Current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Collector Power Dissipa
0.13. Size:196K inchange semiconductor
2sd597.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD597 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SD585, 2SD586, 2SD586A, 2SD587, 2SD587A, 2SD588, 2SD588A, 2SD589, TIP31, 2SD590, 2SD591, 2SD592, 2SD592A, 2SD592ANC, 2SD592NC, 2SD593, 2SD594
