2SD592A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD592, 2SD592ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB621 and 2SB621A5.0 0.2 4.0 0.2FeaturesLarge collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SD592 30VCBO V+0.2 +0.2base volta

Transistor2SD592, 2SD592ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB621 and 2SB621A5.0 0.2 4.0 0.2FeaturesLarge collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SD592 30VCBO V+0.2 +0.2base volta

2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current gain AL Complementary to 2SB624 33Top ViewC B1MARKING 1 22K EDV4 DPACKAGE INFORMATION H JF GMillimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. 1.BASE Complimentary to 2SB624 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Ba

2SD596TRANSISTOR (NPN)FEATURES High DC Current gain. SOT-23 Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200

2SD596 SOT-23-3L Transistor(NPN)1.BASE SOT-23-3L2.EMITTER 2.923.COLLECTOR 0.351.17Features2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter

2SD596 SOT-23 Transistor(NPN)1.BASE SOT-232.EMITTER 3.COLLECTOR Features High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC C

2SD596 Rev.G Apr.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SB624 FEHigh hFE, complementary pair with 2SB624. / Applications Audio frequency amplifier application. / Equivalent Circuit

SMD Type TransistorsNPN Transistors2SD596SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High DC Current gain. Complimentary to 2SB6241 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 2

2SD596 Silicon Epitaxial Planar TransistorFEATURES Micro package. Complementary to 2SB624 PNP Transistor. High DC current gain h FE:200TYP.(V CE=1.0V,I C =100mA) APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwi

2SD596 TRANSI STOR (NPN)2SD596Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to 2SB624 High DC Current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current IC 700 mACollector Power Dissipa

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD597DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25