2SD593
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD593
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2SD593
2SD593
Datasheet (PDF)
9.2. Size:50K panasonic
2sd592 e.pdf 
Transistor2SD592, 2SD592ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB621 and 2SB621A5.0 0.2 4.0 0.2FeaturesLarge collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SD592 30VCBO V+0.2 +0.2base volta
9.3. Size:46K panasonic
2sd592.pdf
Transistor2SD592, 2SD592ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB621 and 2SB621A5.0 0.2 4.0 0.2FeaturesLarge collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SD592 30VCBO V+0.2 +0.2base volta
9.4. Size:322K secos
2sd596.pdf
2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current gain AL Complementary to 2SB624 33Top ViewC B1MARKING 1 22K EDV4 DPACKAGE INFORMATION H JF GMillimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max
9.5. Size:1584K jiangsu
2sd596.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. 1.BASE Complimentary to 2SB624 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Ba
9.6. Size:1433K htsemi
2sd596.pdf
2SD596TRANSISTOR (NPN)FEATURES High DC Current gain. SOT-23 Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200
9.7. Size:378K lge
2sd596 sot-23-3l.pdf
2SD596 SOT-23-3L Transistor(NPN)1.BASE SOT-23-3L2.EMITTER 2.923.COLLECTOR 0.351.17Features2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
9.8. Size:364K lge
2sd596 sot-23.pdf
2SD596 SOT-23 Transistor(NPN)1.BASE SOT-232.EMITTER 3.COLLECTOR Features High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC C
9.9. Size:1228K blue-rocket-elect
2sd596.pdf
2SD596 Rev.G Apr.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SB624 FEHigh hFE, complementary pair with 2SB624. / Applications Audio frequency amplifier application. / Equivalent Circuit
9.10. Size:1278K kexin
2sd596.pdf
SMD Type TransistorsNPN Transistors2SD596SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High DC Current gain. Complimentary to 2SB6241 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 2
9.11. Size:907K cn shikues
2sd596.pdf
2SD596 Silicon Epitaxial Planar TransistorFEATURES Micro package. Complementary to 2SB624 PNP Transistor. High DC current gain h FE:200TYP.(V CE=1.0V,I C =100mA) APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwi
9.12. Size:1599K cn yongyutai
2sd596.pdf
2SD596 TRANSI STOR (NPN)2SD596Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to 2SB624 High DC Current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current IC 700 mACollector Power Dissipa
9.13. Size:196K inchange semiconductor
2sd597.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD597DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SD589
, 2SD59
, 2SD590
, 2SD591
, 2SD592
, 2SD592A
, 2SD592ANC
, 2SD592NC
, TIP127
, 2SD594
, 2SD596
, 2SD596DV1
, 2SD596DV2
, 2SD596DV3
, 2SD596DV4
, 2SD596DV5
, 2SD596V1
.
