2SD598 Todos los transistores

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB621 and 2SB621A 5.0 0.2 4.0 0.2 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SD592 30 VCBO V +0.2 +0.2 base volta

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB621 and 2SB621A 5.0 0.2 4.0 0.2 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SD592 30 VCBO V +0.2 +0.2 base volta

2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current gain A L Complementary to 2SB624 3 3 Top View C B 1 MARKING 1 2 2 K E DV4 D PACKAGE INFORMATION H J F G Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. 1.BASE Complimentary to 2SB624 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Ba

2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. SOT-23 Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units 2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200

2SD596 SOT-23-3L Transistor(NPN) 1.BASE SOT-23-3L 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC Current gain.hFE 200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter

2SD596 SOT-23 Transistor(NPN) 1.BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC Current gain.hFE 200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC C

SMD Type Transistors NPN Transistors 2SD596 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High DC Current gain. Complimentary to 2SB624 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 2

2SD596 Silicon Epitaxial Planar Transistor FEATURES Micro package. Complementary to 2SB624 PNP Transistor. High DC current gain h FE 200TYP.(V CE=1.0V,I C =100mA) APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwi

2SD596 TRANSI STOR (NPN) 2SD596 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to 2SB624 High DC Current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Collector Power Dissipa

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD597 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25