2SD601
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD601
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75
MHz
Capacitancia de salida (Cc): 3.5
pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar 2SD601
2SD601
Datasheet (PDF)
..1. Size:38K panasonic
2sd601.pdf 
Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin
0.1. Size:43K panasonic
2sd601a e.pdf
Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin
0.2. Size:52K secos
2sd601a.pdf
2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE AL Low collector to emitter saturation voltage VCE(sat) 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran
0.3. Size:854K blue-rocket-elect
2sd601a.pdf
2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM)Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva
0.4. Size:123K china
2sd601lt1.pdf
2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package:SOT-23 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 50 V PIN: 1 2 3Collector-Emitter Voltage Vceo 45
0.5. Size:353K kexin
2sd601a.pdf
SMD Type TransistorsNPN Transistors2SD601ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High hFE Low VCE(sat) For general amplification1 2+0.10.95-0.1 0.1+0.05-0.01 Complimentary to 2SB709A+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
