2SD601A Todos los transistores

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran

2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM) Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva

SMD Type Transistors NPN Transistors 2SD601A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High hFE Low VCE(sat) For general amplification 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complimentary to 2SB709A +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package SOT-23 * Collector Current Ic= 100mA * Collector-Emitter Voltage Vce= 45V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 50 V PIN 1 2 3 Collector-Emitter Voltage Vceo 45

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 pack

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 pack

2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 3 Top View CLASSIFICATION OF hFE (1) C B 1 1 2 Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2 K E Range 85 170 120 240 170 340 D Marking Code WQ

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50

2SD602A TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector

2SD602 TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector P

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEO High VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

2SD602(BR3DG602M) 2SD602A(BR3DG602AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB710(BR3CG710M),2SB710A(BR3CG710AM) Complementary pair with 2SB710(BR3CG710M),2SB710A(BR3CG710AM) / Applications General

SMD Type Transistors NPN Transistors 2SD602A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low Collector to Emitter Saturation Voltage Mini Type Package 1 2 Complimentary to 2SB710A +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volt

RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation Pc(max)=225mW * Collector-Emitter Voltage Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit 1. 1.GATE Collector-Base Voltage Vcbo 75 V 2.SOURCER 2.4 3.DRAIE 1.3 Collector-Emitter Voltage Vceo 40 V Emitter-Base V

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mount

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD605 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE

isc Silicon NPN Power Transistor 2SD600K DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSO

isc Silicon NPN Power Transistor 2SD608 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Complement to Type 2SB628 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SD600 DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLU