2SD605D Todos los transistores

 8.1. Size:181K  inchange semiconductor
 2sd605.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD605 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE

 9.1. Size:115K  sanyo
 2sd600k.pdf

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

 9.2. Size:126K  sanyo
 2sd600.pdf

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

 9.3. Size:43K  panasonic
 2sd601a e.pdf

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

 9.4. Size:44K  panasonic
 2sd602 e.pdf

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 pack

 9.5. Size:40K  panasonic
 2sd602.pdf

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 pack

 9.6. Size:38K  panasonic
 2sd601.pdf

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

 9.7. Size:1177K  secos
 2sd602,602a.pdf

2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 3 Top View CLASSIFICATION OF hFE (1) C B 1 1 2 Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2 K E Range 85 170 120 240 170 340 D Marking Code WQ

 9.8. Size:52K  secos
 2sd601a.pdf

2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran

 9.9. Size:696K  jiangsu
 2sd602a.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50

 9.10. Size:429K  htsemi
 2sd602a.pdf

2SD602A TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector

 9.11. Size:453K  htsemi
 2sd602.pdf

2SD602 TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector P

 9.12. Size:405K  blue-rocket-elect
 2sd600k.pdf

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEO High VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

 9.13. Size:854K  blue-rocket-elect
 2sd601a.pdf

2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM) Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva

 9.14. Size:713K  blue-rocket-elect
 2sd602.pdf

2SD602(BR3DG602M) 2SD602A(BR3DG602AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB710(BR3CG710M),2SB710A(BR3CG710AM) Complementary pair with 2SB710(BR3CG710M),2SB710A(BR3CG710AM) / Applications General

 9.15. Size:123K  china
 2sd601lt1.pdf

2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package SOT-23 * Collector Current Ic= 100mA * Collector-Emitter Voltage Vce= 45V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 50 V PIN 1 2 3 Collector-Emitter Voltage Vceo 45

 9.16. Size:353K  kexin
 2sd601a.pdf

SMD Type Transistors NPN Transistors 2SD601A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High hFE Low VCE(sat) For general amplification 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complimentary to 2SB709A +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

 9.17. Size:352K  kexin
 2sd602a.pdf

SMD Type Transistors NPN Transistors 2SD602A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low Collector to Emitter Saturation Voltage Mini Type Package 1 2 Complimentary to 2SB710A +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volt

 9.18. Size:59K  wej
 2sd602lt1.pdf

RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation Pc(max)=225mW * Collector-Emitter Voltage Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit 1. 1.GATE Collector-Base Voltage Vcbo 75 V 2.SOURCER 2.4 3.DRAIE 1.3 Collector-Emitter Voltage Vceo 40 V Emitter-Base V

 9.19. Size:195K  inchange semiconductor
 2sd600 2sd600k.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mount

 9.20. Size:194K  inchange semiconductor
 2sd60.pdf

 9.21. Size:214K  inchange semiconductor
 2sd600k.pdf

isc Silicon NPN Power Transistor 2SD600K DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSO

 9.22. Size:214K  inchange semiconductor
 2sd608.pdf

isc Silicon NPN Power Transistor 2SD608 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Complement to Type 2SB628 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 9.23. Size:214K  inchange semiconductor
 2sd600.pdf

isc Silicon NPN Power Transistor 2SD600 DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLU