2SD628H Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD628H

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5000

Encapsulados: TO3

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2SD628H datasheet

 8.1. Size:208K  inchange semiconductor
 2sd628.pdf pdf_icon

2SD628H

isc Silicon NPN Darlington Power Transistor 2SD628 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(sus) High DC Current Gain- h = 1000(Min.)@I = 5A FE C Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE (sat) C Complement to Type 2SB638 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

 9.1. Size:71K  sanyo
 2sd627.pdf pdf_icon

2SD628H

 9.2. Size:113K  sanyo
 2sd621.pdf pdf_icon

2SD628H

 9.3. Size:202K  inchange semiconductor
 2sd627.pdf pdf_icon

2SD628H

isc Silicon NPN Power Transistor 2SD627 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Coll

MOSTRAR MÁS

Otros transistores... 2SD620, 2SD621, 2SD622, 2SD624, 2SD625, 2SD626, 2SD627, 2SD628, 2SA1943, 2SD629, 2SD629H, 2SD63, 2SD630, 2SD631, 2SD632, 2SD633, 2SD634