2SD630
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD630
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 30
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.4
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD630
2SD630
Datasheet (PDF)
9.1. Size:44K 1
2sd639.pdf 
Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute
9.2. Size:315K 1
2sd636 2sd637.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
9.4. Size:51K panasonic
2sd637 e.pdf
Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45
9.5. Size:46K panasonic
2sd637.pdf
Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45
9.6. Size:44K panasonic
2sd638 e.pdf
Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute
9.8. Size:207K inchange semiconductor
2sd635.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD635DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p
9.9. Size:197K inchange semiconductor
2sd632.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD632DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl
9.10. Size:207K inchange semiconductor
2sd633.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD633DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p
9.11. Size:207K inchange semiconductor
2sd634.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD634DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p
9.12. Size:86K inchange semiconductor
2sd633 2sd635.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emit
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
