2SD632 Todos los transistores

 ..1. Size:197K  inchange semiconductor
 2sd632.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD632 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Excellent Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers appl

 9.1. Size:44K  1
 2sd639.pdf

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute

 9.2. Size:315K  1
 2sd636 2sd637.pdf

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

 9.3. Size:167K  toshiba
 2sd633 2sd635.pdf

 9.4. Size:51K  panasonic
 2sd637 e.pdf

 9.5. Size:46K  panasonic
 2sd637.pdf

 9.6. Size:44K  panasonic
 2sd638 e.pdf

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute

 9.7. Size:127K  mospec
 2sd633-35.pdf

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 9.8. Size:207K  inchange semiconductor
 2sd635.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p

 9.9. Size:207K  inchange semiconductor
 2sd633.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD633 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p

 9.10. Size:207K  inchange semiconductor
 2sd634.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB674 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p

 9.11. Size:86K  inchange semiconductor
 2sd633 2sd635.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emit