2SD633 Todos los transistores

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD633 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emit

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Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD632 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Excellent Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers appl

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB674 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p