2SD636 Todos los transistores

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2SD636 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD636

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 75 MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hfe): 90

Empaquetado / Estuche: X73

Búsqueda de reemplazo de transistor bipolar 2SD636

 

2SD636 Datasheet (PDF)

5.1. 2sd633 2sd635.pdf Size:167K _toshiba

2SD636
2SD636

5.2. 2sd638 e.pdf Size:44K _panasonic

2SD636
2SD636

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit: mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maxim

5.3. 2sd637.pdf Size:46K _panasonic

2SD636
2SD636

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

5.4. 2sd637 e.pdf Size:51K _panasonic

2SD636
2SD636

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

5.5. 2sd633-35.pdf Size:127K _mospec

2SD636
2SD636

A A A

5.6. 2sd634.pdf Size:234K _inchange_semiconductor

2SD636
2SD636

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

5.7. 2sd633 2sd635.pdf Size:86K _inchange_semiconductor

2SD636
2SD636

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter

Otros transistores... 2SD629H , 2SD63 , 2SD630 , 2SD631 , 2SD632 , 2SD633 , 2SD634 , 2SD635 , BC549 , 2SD637 , 2SD638 , 2SD639 , 2SD64 , 2SD640 , 2SD641 , 2SD642 , 2SD643 .

 


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