2SD673 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD673

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 180 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO3

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2SD673 datasheet

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 2sd673.pdf pdf_icon

2SD673

isc Silicon NPN Power Transistors 2SD673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2

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 2sd673a.pdf pdf_icon

2SD673

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 2sd679.pdf pdf_icon

2SD673

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose ampl

 9.2. Size:184K  inchange semiconductor
 2sd670.pdf pdf_icon

2SD673

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD670 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stage

MOSTRAR MÁS

Otros transistores... 2SD669B, 2SD669C, 2SD669D, 2SD67, 2SD670, 2SD670H, 2SD671, 2SD672, MPSA42, 2SD673A, 2SD674, 2SD674A, 2SD675, 2SD675A, 2SD676, 2SD676A, 2SD677