2SD680 Todos los transistores

 9.1. Size:116K  toshiba
 2sd687.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:78K  toshiba
 2sd688.pdf

 9.3. Size:206K  inchange semiconductor
 2sd683.pdf

isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High DC Current Gain- h = 500(Min.)@ I = 5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage and high power switching applications. Motor driver applications. ABSOLUTE MAXIMUM RATIN

 9.4. Size:207K  inchange semiconductor
 2sd684.pdf

 9.5. Size:209K  inchange semiconductor
 2sd687.pdf

isc Silicon NPN Darlington Power Transistor 2SD687 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications.

 9.6. Size:212K  inchange semiconductor
 2sd689.pdf

isc Silicon NPN Darlington Power Transistor 2SD689 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Complement to Type 2SB679 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 9.7. Size:210K  inchange semiconductor
 2sd686.pdf

isc Silicon NPN Darlington Power Transistor 2SD686 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Complement to Type 2SB676 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS