2SD713 Todos los transistores

 

2SD713 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD713

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 75 pF

Ganancia de corriente contínua (hfe): 55

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD713

 

2SD713 Datasheet (PDF)

5.1. 2sd718.pdf Size:106K _utc

2SD713
2SD713

UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25?) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO

5.2. 2sd718.pdf Size:118K _mospec

2SD713
2SD713

A A A

 5.3. 2sd717.pdf Size:88K _wingshing

2SD713

Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 70 V CBO Collector-emitter voltage (open base) V - 70 V CEO Collector cu

5.4. 2sd716.pdf Size:89K _wingshing

2SD713

2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 100 V Collector current

 5.5. 2sd717.pdf Size:123K _inchange_semiconductor

2SD713
2SD713

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD717 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Low collector saturation voltage Ў¤ High collector power dissipation APPLICATIONS Ў¤ High power switching applications Ў¤ DC-DC converter and DC-AC inverter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute m

5.6. 2sd716.pdf Size:122K _inchange_semiconductor

2SD713
2SD713

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD716 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SB686 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 30~35W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and s

5.7. 2sd718.pdf Size:169K _inchange_semiconductor

2SD713
2SD713

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD718 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SB688 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPT

5.8. 2sd718 to3p.pdf Size:252K _first_silicon

2SD713
2SD713

SEMICONDUCTOR 2SD718 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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