2SD725
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD725
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 600
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD725
2SD725
Datasheet (PDF)
..1. Size:211K inchange semiconductor
2sd725.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD725DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
9.3. Size:213K inchange semiconductor
2sd728.pdf
isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE
9.4. Size:213K inchange semiconductor
2sd726.pdf
isc Silicon NPNPower Transistor 2SD726DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SB690Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
9.5. Size:206K inchange semiconductor
2sd727.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD727DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB691Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching
9.6. Size:186K inchange semiconductor
2sd723.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEODC Current Gain -h = 50(Min)@ I = 0.5AFE CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
