2SD733 Todos los transistores

 ..1. Size:94K  no
 2sd733.pdf

 ..2. Size:123K  inchange semiconductor
 2sd733 2sd733k.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION With TO-3 package Complement to type 2SB697/697K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simpli

 ..3. Size:208K  inchange semiconductor
 2sd733.pdf

isc Silicon NPN Power Transistor 2SD733 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V (Min) (BR)CEO High Current Capability Complement to Type 2SB697 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Co

 9.1. Size:102K  sanyo
 2sd734.pdf

Ordering number 512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Package Dimensions unit mm 2003A [2SB698/2SD734] JEDEC TO-92 B Base ( ) 2SB698 for audio 1W output. EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions

 9.2. Size:206K  inchange semiconductor
 2sd731.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD731 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB695 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switch

 9.3. Size:194K  inchange semiconductor
 2sd73.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD73 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching a

 9.4. Size:185K  inchange semiconductor
 2sd730.pdf

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 12A FE C Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 20A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Powe

 9.5. Size:209K  inchange semiconductor
 2sd732.pdf

isc Silicon NPN Power Transistor 2SD732 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Current Capability Complement to Type 2SB696 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Co