2SD743A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD743A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD743A
2SD743A Datasheet (PDF)
2sd743 2sd743a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s
2sd743.pdf
isc Silicon NPN Power Transistor 2SD743DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40~200 @I = 0.5AFE CComplement to Type 2SB703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifier, lowspeed switching applications.ABSOLUT
2sd748 2sd748a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION With TO-3 package High VCBOHigh power dissipation APPLICATIONS Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum
2sd748.pdf
isc Silicon NPN Power Transistor 2SD748DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier.Regulator for TV power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Bas
2sd745.pdf
isc Silicon NPN Power Transistor 2SD745DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SB705High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsSuitable for output stages of 60~120 watts audio amplifierand vol
2sd74.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD74DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching ap
2sd745 2sd745a 2sd745b.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD745/745A/745B DESCRIPTION With MT-200 package Complement to type 2SB705/705A/705B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
