2SD762A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD762A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO220

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2SD762A datasheet

 ..1. Size:90K  inchange semiconductor
2sd762 2sd762a.pdf pdf_icon

2SD762A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION With TO-220C package Wide area of safe operation APPLICATIONS For audio freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VAL

 8.1. Size:39K  no
2sd762.pdf pdf_icon

2SD762A

 8.2. Size:212K  inchange semiconductor
2sd762.pdf pdf_icon

2SD762A

isc Silicon NPN Power Transistor 2SD762 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max.) @I = 2.0A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIM

 9.1. Size:36K  hitachi
2sd768.pdf pdf_icon

2SD762A

2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 3 k 200 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO

Otros transistores... 2SD758, 2SD759, 2SD75A, 2SD75AH, 2SD75H, 2SD760, 2SD761, 2SD762, 2SA1943, 2SD763, 2SD764, 2SD765, 2SD766, 2SD767, 2SD768, 2SD768K, 2SD769