2SD766
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD766
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 300
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 45
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar 2SD766
2SD766
Datasheet (PDF)
9.1. Size:36K hitachi
2sd768.pdf
2SD768(K)Silicon NPN EpitaxialApplicationMedium speed and power switching complementary pair with 2SB727(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 3 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO
9.4. Size:90K inchange semiconductor
2sd762 2sd762a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION With TO-220C package Wide area of safe operation APPLICATIONS For audio freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VAL
9.5. Size:206K inchange semiconductor
2sd768.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD768DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB727Minimum Lot-to-Lot variations for robust deviceperformance and reliable
9.6. Size:179K inchange semiconductor
2sd764.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD764DESCRIPTIONWith TO-3 PackageHigh Voltage CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.7. Size:212K inchange semiconductor
2sd762.pdf
isc Silicon NPN Power Transistor 2SD762DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max.) @I = 2.0ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIM
Otros transistores... 2SA1771
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