2SD771 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD771
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 25 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 450
Paquete / Cubierta: TO92
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2SD771 Datasheet (PDF)
2sd777.pdf
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2sd772.pdf
isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T
2sd772 2sd772a 2sd772b.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD772 2SD772A 2SD772B DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
