2SD786 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 80 0. 05 1. 60 0. 05 Collector current ICM 0.3 A Collector-base voltage V(BR)CBO 60 V 2SD780 V(BR)CBO 80 V 2SD780A Operating and storage junction temperature range TJ, Tstg -55 to +150 E

2SD787, 2SD788 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB738 and 2SB739 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD787, 2SD788 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD787 2SD788 Unit Collector to base voltage VCBO 20 20 V Collector to emitter voltage VCEO 16 20 V Emitter to base voltage VEBO

2SD789 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current IC 1A Collector

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC Product specification 2SD780A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Micro package. High DC current gain. hFE 200TYP.(VCE=1.0V,IC=50mA). 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type Transistors NPN Transistors 2SD780 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High DC current gain Complimentary to 2SB736 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO

SMD Type Transistors NPN Transistors 2SD780A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High DC current gain Complimentary to 2SB736A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD783 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO