2SD788 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD788
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SD788
2SD788 Datasheet (PDF)
2sd787 2sd788.pdf
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2SD787, 2SD788Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB738 and 2SB739OutlineTO-92MOD1. Emitter2. Collector3. Base3212SD787, 2SD788Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD787 2SD788 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base voltage VEBO
2sd780 2sd780a.pdf
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RoHS 2SD780/2SD780ASOT-23-3L 2SD780/2SD780A TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25) 2. 80 0. 051. 60 0. 05 Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 60 V 2SD780 V(BR)CBO: 80 V 2SD780A Operating and storage junction temperature range TJ, Tstg: -55 to +150 E
2sd789.pdf
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2SD789Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB740OutlineTO-92MOD1. Emitter2. Collector3. Base3212SD789Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector current IC 1ACollector
2sd780a.pdf
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SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specification2SD780ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesMicro package.High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating
2sd780.pdf
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SMD Type TransistorsNPN Transistors2SD780SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High DC current gain Complimentary to 2SB7361 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO
2sd780a.pdf
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SMD Type TransistorsNPN Transistors2SD780ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High DC current gain Complimentary to 2SB736A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCE
2sd783.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD783DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .