2SD789 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD789 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current IC 1A Collector

RoHS 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 80 0. 05 1. 60 0. 05 Collector current ICM 0.3 A Collector-base voltage V(BR)CBO 60 V 2SD780 V(BR)CBO 80 V 2SD780A Operating and storage junction temperature range TJ, Tstg -55 to +150 E

2SD787, 2SD788 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB738 and 2SB739 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD787, 2SD788 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD787 2SD788 Unit Collector to base voltage VCBO 20 20 V Collector to emitter voltage VCEO 16 20 V Emitter to base voltage VEBO

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC Product specification 2SD780A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Micro package. High DC current gain. hFE 200TYP.(VCE=1.0V,IC=50mA). 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type Transistors NPN Transistors 2SD780 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High DC current gain Complimentary to 2SB736 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO

SMD Type Transistors NPN Transistors 2SD780A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High DC current gain Complimentary to 2SB736A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD783 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO