2SD799 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol Absolute maximum rating

isc Silicon NPN Darlington Power Transistor 2SD799DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min.)(BR)CEOHigh DC Current Gain: h = 600(Min.) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

AAA

Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION DARLINGTON High voltage With TO-220 package APPLICATIONS With switching and igniter applications PINNING PIN DESCRIPTION1 Base 2 Collector;connected tomounting base 3 emitterFig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNITVCB

2SD794/2SD794A TO-126C Transistor (NPN)TO-126C1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features High voltage and Large current capacity Complementary to 2SB744,2SB744A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V 3.0007.8003.4008.200 1.800Collector-Emitter Voltage 2SD794 45 2.200VCEO V 4.040

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD797DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityAPPLICATIONSHigh power amplifier applications.High Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SD797DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High Power switching applications.DC-DC converter applications.Regulator ap

isc Silicon NPN Power Transistor 2SD795DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.7V(Max) @I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low speedswitching applications.ABSOLUT

isc Silicon NPN Darlington Power Transistor 2SD798DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

isc Silicon NPN Power Transistor 2SD794DESCRIPTIONHigh Collector Current -I = 3ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOComplement to Type 2SB744Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD792DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD793DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = 30V(Min.)(BR)CEOLow Collector to Emitter Saturation Voltage: V = 2.0V(Max.)@I = 1.5ACE(sat) CExcellent h linearityFEComplement to Type 2SB743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION With TO-126 package Complement to type 2SB744/744A High current 3A Excellent hFE linearity APPLICATIONS For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas