2SD800 Todos los transistores

 ..1. Size:181K  inchange semiconductor
 2sd800.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD800 DESCRIPTION High Breakdown Voltage- V = 750V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX

 9.1. Size:213K  inchange semiconductor
 2sd807.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD807 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM

 9.2. Size:204K  inchange semiconductor
 2sd803.pdf

isc Silicon NPN Darlingtion Power Transistor 2SD803 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 2000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier